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Comparison of Silicon MOSFET and Silicon carbide MOSFET in EV charging application

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Ruchi Gautam , Dr. Manjeet singh
» doi: 10.48047/ecb/2023.12.si4.765

Abstract

MOSFET is an electronic device having high switching frequency which helps to attain fast operation in any circuit. Silicon carbide is a semiconductor having extraordinary behavior as compared to Si based semiconductor. Hence SiC MOSFET can be used to enhance the capability of electronic devices. In this paper, with the help of silicon carbide MOSFET, an electric vehicle charger is design and compare its result as compared with the silicon MOSFET based electric vehicle charger. Only a basic charging circuit is discussed here to compare the characteristics. The characteristics of silicon MOSFET and silicon carbide MOSFET is discussed and presented with the help of MATLAB.

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