Thin films of Boron antimode (BSb) have been successfully deposited on FTO coated glass substrate by PLD technique at 673 K. The band gap was calculated to be ~0.55 eV. Dielectric constant anddielectric loss factor wereinvestigated with frequencies at various temperatures. The dielectric constant showed various natures arising due to the defects, impurities and space charge formation at the interface layers. The maximum dielectric losswas recorded at an applied a.c. frequency equal to the hopping frequency of the electrons, we obtained maximum dielectric loss factor. The energy per unit volume per unit time was calculated from the dielectric loss factor. Cole-Cole plots indicated two semi-circles in the high temperature domain (150 K -250 K) while those measured in the lower temperature domain (10-125 K) indicated one semicircle.