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ISSN 2063-5346
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Proposal for a novel perovskite solar cell based on BaZrS3 with optimized electron and hole transport layer using SCAPS -1D

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Shreyus Goutham Kumar1, Suraj N2, Anmol Pramod2, Prashanth C R3, Gajanan V Honnavar4
» doi: 10.48047/ecb/2023.12.10.728

Abstract

Perovskite solar cells have made impressive strides in recent years, with efficiency rising quickly from reports of around 3% in 2009 to over 25% now. Chalcogenides are one of the main compounds applied as absorbers of highly efficient photovoltaic devices based on thin-film technology. This paper analyses the energy conversion in a Chalcogenide Perovskite Solar Cell with BaZrS3 as the absorber layer. The effects of different Electron and Hole transport layers are thoroughly discussed. According to our analysis, ZnO and CuSbS2 are the best ETL and HTL layers respectively. The thickness and defect density of the absorber, ETL and HTL has been optimized to get the highest PCE. The density of defects in the interface layers has also been optimized. The final proposed structure- FTO/ZnO/BaZrS3/CuSbS2/back-contact has a PCE of 26.54%.

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