Nowadays, Semiconducting thin films are efficient candidates for good optical and electrical properties. In this present study, thin films of Ruthenium-doped V2O5 with different weight percentages (2% to 8%) were prepared through the method of spray Pyrolysis. The prepared Ru doped thin films were characterized by spectrographic tools such as XRD, SEM with EDAX, FTIR, UV-Vis and Hall effect to study their crystalline nature, Functional group, band gap, resistivity, conductivity and mobility of the flow of electrons respectively. The structural morphology of the synthesized thin films was discussed through the micrographic image obtained from Scanning electron microscopy together with their surface occupancy plots. The obtained minimum crystallite size is about 24.8 nm for 8% molarities. The morphological and structural studies show enhanced results for an 8% sample which makes it a viable candidate for optical and electrical applications.