As device dimensions are scaled, using strained Channels as functionality booster becomes more special significance. Tunnel field effect transistor (TFET) has to play the most imminent role in the future technology of the transistors. The intent with this paper will be really to do research of Single gate (SG) TFET, Double gate (DG) TFET out of the initial point to prior now. This paper evinced structural models of Double metal FinTFET. The proposed model improving the performance and at same time more concentrated on decrease the limitation of TFET i.e., maintain the steeper slope, improve the drive (ION) current and reduces ambipolar leakage(IOFF) current. This result develops the subthreshold swing (SS) by 18.2 mV/decade, drive current (ION) is close to 10-6 A/μm, leakage current (IOFF) is close to 10-15 A/μm and also diminish the ambipolarity of the device compared to the FinTFET.