This study describes the design, construction, and modeling of a magnetic tunnel junction-based Spin Transfer Torque Random Access Memory (STT-MRAM). Spin Transfer Torque Magnetic Random Access Memory (STT-MTJ-MRAM) was used in the tests. Various findings are demonstrated about the relationship between voltage and magnetization components in different directions, as well as the dependence on damping factor and precision. Additionally, the paper presents voltage-current graphs that depict the dependence on torque and variation of output voltage concerning time. The results provide valuable insights into the behavior and performance of STT-MTJ-MRAM in various operating scenarios. Furthermore, the paper discusses the variations in bit line voltage, digital output voltage, pre-charge voltage, word transfer operation, read operation, and write operation. Additionally, the paper presents the changes in phase angle and azimuth angle with respect to time and the magnetization's strength in different directions over time.