This paper is aimed at to investigate the propagation of acousto diffusive (ETP) Lamb waves in homogenous isotropic, thermally conducting, semiconductor material in contact with fluid half space or layer. The concept of relaxation of heat and charge carrier fields is also taken. Secular equations, in isolated mathematical conditions and compact form, for the acousto diffusive lamb waves in semiconducting material half space or a layer with thickness d are derived. The different regions of secular equations are obtained and deduced. The secular equations for acousto diffusive lamb waves are also obtained and deduced. Finally, the numerical solution of various secular equations and other relevant relations is carried out for Germanium (Ge) semiconductor material with the help of functional iteration numerical technique. The dispersion curves, attenuation coefficient of the waves are computed and presented graphically, in order to illustrate and compare the analytical results